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By Paul R. Gray

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Extra resources for Analysis and Design of Analog Integrated Circuits

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Collector, base, and emitter nodes are labeled C, B and E, respectively. The elements in this circuit are present in the equivalent circuit of any bipolar transistor and are specified by relatively few parameters (P, TF,7,I,). Note that in the evaluation of the small-signal parameters for pnp transistors, the magnitude only of Ic is used. In the following sections, further elements are added to this model to account for parasitics and second-order effects. 6 Collector-Base Resistance Consider the effect of variations in VCEon the minority charge in the base as illustrated in Fig.

12, and breakdown occurs at a value BVcEo, which is sometimes called the sustaining voltage LVcEo. As in previous cases, operation near the breakdown voltage is destructive to the device only if the current (and thus the power dissipation) becomes excessive. The effects of avalanche breakdown on the common-emitter characteristics are more complex than in the common-base configuration. This is because hole-electron pairs are produced by the avalanche process and the holes are swept into the base, where they effectively contribute to the base current.

5 Large-SignalBehavior of Metal-Oxide-SemiconductorField-EffectTransistors 39 substrate material and a conductive gate material (metal or polycrystalline silicon) covers the oxide between source and drain. Note that the gate is horizontal in Fig. 26, and we will use this orientation in all descriptions of the physical operation of MOS devices. In operation, the gate-source voltage modifies the conductance of the region under the gate, allowing the gate voltage to control the current flowing between source and drain.

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